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13LED20M-TO - Typical optical and electrical characteristics.

13LED20M-TO_181159.PDF Datasheet


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15LED20M-TO Typical optical and electrical characteristics.
Anadigics Inc
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Maxim Integrated Products, Inc.
MAXIM[Maxim Integrated Products]
KT872N15 KT872N55 KT872P51 KT872P55 KT872T55 KT872 Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches. Electrical parameter A lead spacing .320 inches. Aperture width in front of sensor .010 inches. Aperture width in front of emitter .
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture in front of sensor .050inches. Aperture width in front of emitter
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320inches. Aperture in front of sensor .050inches. Aperture in front of emitter .050i
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .320inches. Aperture width in front of sensor .050inches. Aperture in front of emitter
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .0
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter B lead spacing .320 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .050 inches
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .010 inches. Aperture in front of emitter .05
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .01
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches SQ, leads. Electrical parameter C lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .05
Optek Technology
BGA318 Q62702-G0043 From old datasheet system
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Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 16 dB typical gain at 1.0 GHz 12 dBm typical P-1dB at 1.0 GHz) 0 MHz - 1200 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
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From old datasheet system
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
MPX200GVSX MPX200ASX MPX200D MPX200DP MPX200GP MPX 0 to 200 kPa (0-29 psi) 60 mV FULL SCALE SPAN (TYPICAL) 000千帕-29 PSI)的60压全尺寸跨度(典型)
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Motorola Mobility Holdings, Inc.
Motorola, Inc.
MOTOROLA[Motorola, Inc]
http://
MCP606-I/P MCP606-I/SN MCP606-I/ST MCP609-I/P MCP6 The MCP606 operational amplifier (op amp) has a gain bandwidth product of 155 kHz with a low typical operating current of 18.7 and ...
The MCP609 quad operational amplifier (op amp) has a gain bandwidth product of 155 kHz with a low typical operating current of 18.7 ...
The MCP608 operational amplifier (op amp) has a gain bandwidth product of 155 kHz with a low typical operating current of 18.7 and ...
The MCP607 dual operational amplifier (op amp) has a gain bandwidth product of 155 kHz with a low typical operating current of 18.7 ...
2.5V TO 5.5V MICROPOWER CMOS OP AMPS
Microchip Technology Inc.
JQ1A-12V JQ1P-XX JQ1AP-12V JQ1AP-18V JQ1AP-24V JQ1 Spacer; Spacing Height:2"; Thread Size:6-32; Body Diameter:0.375"; Internal Thread Depth:0.375"; Leaded Process Compatible:Yes; MIL SPEC:NL-523W01-016; Pack Quantity:1 RoHS Compliant: Yes 高电继电器机械噪声免
HIGH ELECTRICAL MECHANICAL NOISE IMMUNITY RELAY 高电继电器机械噪声免
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Panasonic, Corp.
NAIS[Matsushita Electric Works(Nais)]
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http://
HEDS-5500 HEDS-5540 HEDS-5505-A14 HEDS5540 HEDM-55 HEDL-5561#J06 · Encoder Line Drivers
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Quick Assembly Two and Three Channel Optical Encoders
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
 
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